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Transistors - Special Purpose

6 Results

  • Manufacturer+1

  • Case Connection

  • Configuration

  • DS Breakdown Voltage-Min

  • ECCN Code

  • FET Technology

  • Highest Frequency Band

  • Ihs Manufacturer

  • JESD-30 Code

  • Number of Terminals

  • Operating Mode

  • Package Body Material

  • Package Description

  • PTF102015
    PTF102015

    RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20265, 2 PIN

    manufacturer: Ericsson

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • PTF10147
    PTF10147

    Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20244, 3 PIN

    manufacturer: Ericsson

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • PTF10125
    PTF10125

    RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20250, 4 PIN

    manufacturer: Ericsson

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • PTF10111
    PTF10111

    RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20222, 3 PIN

    manufacturer: Ericsson

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • PTF10020
    PTF10020

    Description: RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

    manufacturer: Ericsson

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • PTE10048
    PTE10048

    Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

    manufacturer: Ericsson

    • InventoryIn Stock
    • MOQ1
    • SPQ1