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Transistors - Special Purpose

29 Results

  • Manufacturer+1

  • ECCN Code

  • Ihs Manufacturer

  • Part Life Cycle Code

  • Reach Compliance Code

  • Package Description

  • Rohs Code

  • Peak Reflow Temperature (Cel)

  • FET Technology

  • Polarity/Channel Type

  • Time@Peak Reflow Temperature-Max (s)

  • Configuration

  • DS Breakdown Voltage-Min

  • PD25025F
    PD25025F

    RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • TGF2120
    TGF2120

    RF Small Signal Field-Effect Transistor,

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SP2030
    SP2030

    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • TGF2023-01
    TGF2023-01

    Transistor

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • QPD1035L
    QPD1035L

    GaN FETs 30W, DC - 6GHz, Flanged

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • QPD1035
    QPD1035

    GaN FETs 30W, DC - 6GHz

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • UF4C120070B7S
    UF4C120070B7S

    1200V, Sic Fet

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • UJ3C065030K3S
    UJ3C065030K3S

    TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • UJ3C120080K3S
    UJ3C120080K3S

    Description: Power Field-Effect Transistor, 33A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247,

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • TGF2957
    TGF2957

    RF Power Field-Effect Transistor

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD2250SOT89
    FPD2250SOT89

    RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • CLY2
    CLY2

    RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, ROHS COMPLIANT, MW6, 6 PIN

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD750SOT343E
    FPD750SOT343E

    Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • T1G3000532-SM
    T1G3000532-SM

    RF Power Field-Effect Transistor,

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD3000
    FPD3000

    RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • TGF2952
    TGF2952

    Description: RF Small Signal Field-Effect Transistor

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • TGF2953
    TGF2953

    RF Power Field-Effect Transistor

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD1500SOT89
    FPD1500SOT89

    RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • UJ4C075033L8S
    UJ4C075033L8S

    -

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • QPD2795
    QPD2795

    RF Power Field-Effect Transistor,

    manufacturer: Qorvo

    • InventoryIn Stock
    • MOQ1
    • SPQ1