MRF581

Advanced MRF581

Part No:

MRF581

Manufacturer:

Advanced

Datasheet:

-

Package:

-

AINNX NO:

49975698-MRF581

Description:

RF Bipolar Transistors NPN SILICON RF TRANSISTOR

Products specifications
  • Emitter- Base Voltage VEBO
    2.5 V
  • Pd - Power Dissipation
    2.5 W
  • Transistor Polarity
    NPN
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • DC Collector/Base Gain hfe Min
    50
  • Minimum Operating Temperature
    - 65 C
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Mounting Styles
    Through Hole
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Brand
    Advanced Semiconductor, Inc.
  • Maximum DC Collector Current
    200 mA
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    18 V
  • Subcategory
    Transistors
  • Technology
    Si
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    1 GHz
  • Configuration
    Single
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF Bipolar Transistors
  • Transistor Type
    Bipolar
  • Continuous Collector Current
    200 mA
  • Product Category

    a particular group of related products.

    RF Bipolar Transistors
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