ALD110904PAL

Advanced Linear Devices Inc. ALD110904PAL

Part No:

ALD110904PAL

Datasheet:

ALD110804,904

Package:

8-DIP (0.300, 7.62mm)

ROHS:

AINNX NO:

6824475-ALD110904PAL

Description:

MOSFET 2N-CH 10.6V 8DIP

Products specifications
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    8-DIP (0.300, 7.62mm)
  • Number of Pins
    8
  • Current - Continuous Drain (Id) @ 25℃
    12mA 3mA
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    10 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    0°C~70°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    EPAD®
  • Published
    2006
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    500mW
  • Reach Compliance Code
    unknown
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    500mW
  • FET Type
    2 N-Channel (Dual) Matched Pair
  • Rds On (Max) @ Id, Vgs
    500 Ω @ 4.4V
  • Vgs(th) (Max) @ Id
    420mV @ 1μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2.5pF @ 5V
  • Continuous Drain Current (ID)
    3mA
  • Gate to Source Voltage (Vgs)
    10.6V
  • Drain to Source Breakdown Voltage
    10V
  • FET Feature
    Standard
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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