EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Category
Power MOSFET
Process Technology
TMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Maximum Continuous Drain Current (A)
85
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
100
Typical Gate Charge @ Vgs (nC)
Typical Gate Charge @ 10V (nC)
93.7
Typical Input Capacitance @ Vds (pF)
6200@25V
Maximum Power Dissipation (mW)
135000
Typical Fall Time (ns)
28
Typical Rise Time (ns)
13.2
Typical Turn-Off Delay Time (ns)
45.5
Typical Turn-On Delay Time (ns)
9.7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Obsolete
Configuration
Single Dual Drain
Channel Type
N