APT30M70BVRG

Atmel (Microchip Technology) APT30M70BVRG

Part No:

APT30M70BVRG

Datasheet:

-

Package:

TO-247-3

AINNX NO:

31095397-APT30M70BVRG

Description:

MOSFET FG, MOSFET, 300V, TO-247, RoHSView in Development Tools Selector

Products specifications
  • Package / Case
    TO-247-3
  • RoHS
    Details
  • Mounting Styles
    Through Hole
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    300 V
  • Id - Continuous Drain Current
    48 A
  • Rds On - Drain-Source Resistance
    70 mOhms
  • Vgs - Gate-Source Voltage
    - 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage
    2 V
  • Qg - Gate Charge
    225 nC
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Pd - Power Dissipation
    370 W
  • Channel Mode
    Enhancement
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Typical Turn-Off Delay Time
    57 ns
  • Typical Turn-On Delay Time
    14 ns
  • Unit Weight
    0.211644 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    21 ns
  • Transistor Type
    1 N-Channel
0 Similar Products Remaining