APT56M50B2

Atmel (Microchip Technology) APT56M50B2

Part No:

APT56M50B2

Datasheet:

-

Package:

T-MAX-3

AINNX NO:

31095497-APT56M50B2

Description:

MOSFET FG, MOSFET, 500V, TO-247 T-MAXView in Development Tools Selector

Products specifications
  • Package / Case
    T-MAX-3
  • RoHS
    Details
  • Mounting Styles
    Through Hole
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    500 V
  • Id - Continuous Drain Current
    56 A
  • Rds On - Drain-Source Resistance
    85 mOhms
  • Vgs - Gate-Source Voltage
    - 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage
    4 V
  • Qg - Gate Charge
    220 nC
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Pd - Power Dissipation
    780 W
  • Channel Mode
    Enhancement
  • Tradename
    Power MOS 8
  • Forward Transconductance - Min
    43 S
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Typical Turn-Off Delay Time
    100 ns
  • Typical Turn-On Delay Time
    38 ns
  • Unit Weight
    0.208116 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    45 ns
  • Height
    5.31 mm
  • Length
    21.46 mm
  • Width
    16.26 mm
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