ATF-54143-TR1G

Broadcom Limited ATF-54143-TR1G

Part No:

ATF-54143-TR1G

Manufacturer:

Broadcom Limited

Datasheet:

-

Package:

SC-82A, SOT-343

ROHS:

AINNX NO:

6089992-ATF-54143-TR1G

Description:

BROADCOM LIMITED ATF-54143-TR1G RF FET Transistor, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343

Products specifications
  • Factory Lead Time
    6 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Package / Case
    SC-82A, SOT-343
  • Number of Pins
    4
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -65°C
  • Voltage - Rated DC
    5V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    725mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    120mA
  • Frequency
    2GHz
  • Base Part Number
    ATF-54143
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    725mW
  • Case Connection
    SOURCE
  • Current - Test
    60mA
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    3V
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    pHEMT FET
  • Continuous Drain Current (ID)
    120mA
  • Gate to Source Voltage (Vgs)
    1V
  • Gain
    16.6dB
  • Drain Current-Max (Abs) (ID)
    0.12A
  • DS Breakdown Voltage-Min
    5V
  • Power - Output
    20.4dBm
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    0.5dB
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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