VMMK-1225-BLKG

Broadcom Limited VMMK-1225-BLKG

Part No:

VMMK-1225-BLKG

Manufacturer:

Broadcom Limited

Datasheet:

-

Package:

0402 (1005 Metric)

ROHS:

AINNX NO:

6092192-VMMK-1225-BLKG

Description:

BROADCOM LIMITED VMMK-1225-BLKG RF FET Transistor, 5 V, 50 mA, 250 mW, 500 MHz, 26.5 GHz, 0402 [Metric 1005]

Products specifications
  • Mount
    Surface Mount
  • Package / Case
    0402 (1005 Metric)
  • Number of Pins
    3
  • Transistor Element Material
    GALLIUM ARSENIDE
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Strip
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    250mW
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    50mA
  • Frequency
    12GHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • JESD-30 Code
    R-XDCC-N8
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    250mW
  • Case Connection
    SOURCE
  • Current - Test
    20mA
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    5V
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    E-pHEMT
  • Continuous Drain Current (ID)
    50mA
  • Gate to Source Voltage (Vgs)
    1V
  • Gain
    11dB
  • Drain Current-Max (Abs) (ID)
    0.05A
  • DS Breakdown Voltage-Min
    5V
  • Power - Output
    8dBm
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    1dB
  • Voltage - Test
    2V
  • Height
    275μm
  • Length
    1.09mm
  • Width
    585μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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