MM3007 TIN/LEAD

Central Semiconductor MM3007 TIN/LEAD

Part No:

MM3007 TIN/LEAD

Datasheet:

-

Package:

TO-39-3

AINNX NO:

31239103-MM3007 TIN/LEAD

Description:

Bipolar Transistors - BJT NPN 120Vcbo 100Vceo 5.0Vebo 250mA 15pF

Products specifications
  • Package / Case
    TO-39-3
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • RoHS
    N
  • Mounting Styles
    Through Hole
  • Transistor Polarity
    NPN
  • Collector- Emitter Voltage VCEO Max
    100 V
  • Emitter- Base Voltage VEBO
    5 V
  • Maximum DC Collector Current
    -
  • Gain Bandwidth Product fT
    50 MHz
  • DC Collector/Base Gain hfe Min
    50
  • DC Current Gain hFE Max
    250
  • Factory Pack QuantityFactory Pack Quantity
    500
  • Tradename
    0
  • Package Style
    CYLINDRICAL
  • Package Body Material
    METAL
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    No
  • Transition Frequency-Nom (fT)
    50 MHz
  • Manufacturer Part Number
    MM3007TIN/LEAD
  • Package Shape
    ROUND
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    CENTRAL SEMICONDUCTOR CORP
  • Risk Rank
    5.82
  • Series
    MM3007
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • JESD-609 Code
    e0
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    O-MBCY-W3
  • Configuration
    Single
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • JEDEC-95 Code
    TO-39
  • Collector Base Voltage (VCBO)
    120 V
  • DC Current Gain-Min (hFE)
    50
  • Collector-Emitter Voltage-Max
    100 V
  • VCEsat-Max
    0.35 V
  • Collector-Base Capacitance-Max
    15 pF
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