CTLDM7120-M832DS TR

Central Semiconductor Corp CTLDM7120-M832DS TR

Part No:

CTLDM7120-M832DS TR

Package:

8-TDFN Exposed Pad

AINNX NO:

6826849-CTLDM7120-M832DS TR

Description:

MOSFET 2N-CH 20V 1A

Products specifications
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TDFN Exposed Pad
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Current - Continuous Drain (Id) @ 25℃
    1A Ta
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -65°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Reach Compliance Code
    compliant
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power - Max
    1.65W
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    2.4nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drain Current-Max (Abs) (ID)
    1A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    1.65W
  • FET Feature
    Logic Level Gate
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