TE80B180RJ

CGS Brand TE80B180RJ

Part No:

TE80B180RJ

Manufacturer:

CGS Brand

Datasheet:

-

Package:

-

AINNX NO:

38158617-TE80B180RJ

Description:

Res Wirewound 180 Ohm 5% 80W ±440ppm/C RDL Lug Bolt-On/Bracket Mount Loose

Products specifications
  • Lifecycle Status
    Production (Last Updated: 1 week ago)
  • Mounting Type
    PCB Mount
  • Mount
    Brackets
  • Housing Material
    Silicon Coated
  • Manufacturer Part Number
    25-E1000-04
  • Approvals
    CSA;cURus
  • Manufacturer
    NTE Electronics
  • RoHS
    No
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Tolerance
    5 %
  • Number of Terminations
    2
  • Termination
    Solder
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    440 ppm/°C
  • Resistance
    180 Ω
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    225 °C
  • Min Operating Temperature
    -25 °C
  • Composition
    Power resistor, Wirewound
  • Color
    Green
  • Power Rating
    80 W
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    80 W
  • ELV
    Compliant
  • Number of Levels
    1
  • Number of Poles
    4
  • Number of Resistors
    1
  • Lead/Base Style
    Solder
  • Connection Type
    Screw Clamp
  • Pin Length
    4 MilliMeters
  • Length
    151.9936 mm
  • Diameter
    28 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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