PTFB201402FC-V2-R0

Cree PTFB201402FC-V2-R0

Part No:

PTFB201402FC-V2-R0

Manufacturer:

Cree

Datasheet:

-

Package:

H-37248-4

AINNX NO:

30855636-PTFB201402FC-V2-R0

Description:

RF MOSFET Transistors RF LDMOS FET

Products specifications
  • Package / Case
    H-37248-4
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    65 V
  • Rds On - Drain-Source Resistance
    300 mOhms
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 225 C
  • Mounting Styles
    SMD/SMT
  • Factory Pack QuantityFactory Pack Quantity
    50
  • Vgs - Gate-Source Voltage
    10 V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Type
    RF Power MOSFET
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    2010 MHz to 2025 MHz
  • Number of Channels
    1 Channel
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    140 W
  • Transistor Type
    LDMOS FET
  • Gain
    16 dB
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