C2M0080120D

Cree/Wolfspeed C2M0080120D

Part No:

C2M0080120D

Manufacturer:

Cree/Wolfspeed

Package:

TO-247-3

ROHS:

AINNX NO:

9424757-C2M0080120D

Description:

MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT

Products specifications
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Current - Continuous Drain (Id) @ 25℃
    36A Tc
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Number of Elements
    1
  • Power Dissipation (Max)
    192W Tc
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    23.2 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Series
    C2M™
  • Published
    2013
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    208W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    12 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    98mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 5mA
  • Input Capacitance (Ciss) (Max) @ Vds
    950pF @ 1000V
  • Gate Charge (Qg) (Max) @ Vgs
    62nC @ 5V
  • Drain to Source Voltage (Vdss)
    1200V
  • Vgs (Max)
    +25V, -10V
  • Continuous Drain Current (ID)
    31.6A
  • Threshold Voltage
    3.2V
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    1.2kV
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    950pF
  • Drain to Source Resistance
    80mOhm
  • Rds On Max
    98 mΩ
  • Nominal Vgs
    1.7 V
  • Height
    21.1mm
  • Length
    16.13mm
  • Width
    5.21mm
  • REACH SVHC
    Unknown
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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