CAS100H12AM1

Cree/Wolfspeed CAS100H12AM1

Part No:

CAS100H12AM1

Manufacturer:

Cree/Wolfspeed

Datasheet:

CAS100H12AM1

Package:

Module

AINNX NO:

6825361-CAS100H12AM1

Description:

MOSFET 2N-CH 1200V 168A MODULE

Products specifications
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Number of Pins
    3
  • Supplier Device Package
    Module
  • Current - Continuous Drain (Id) @ 25℃
    168A
  • Number of Elements
    2
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Series
    Z-FET™
  • Published
    2013
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    125°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    568W
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    568W
  • Power - Max
    568W
  • FET Type
    2 N-Channel (Half Bridge)
  • Rds On (Max) @ Id, Vgs
    20mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    3.1V @ 50mA
  • Input Capacitance (Ciss) (Max) @ Vds
    9500pF @ 800V
  • Drain to Source Voltage (Vdss)
    1200V 1.2kV
  • Continuous Drain Current (ID)
    168A
  • Threshold Voltage
    2.6V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    1.2kV
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    9.5nF
  • FET Feature
    Standard
  • Drain to Source Resistance
    16mOhm
  • Rds On Max
    20 mΩ
  • Nominal Vgs
    3.1 V
  • REACH SVHC
    Unknown
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Non-RoHS Compliant
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