G4S12020BM

Global Power G4S12020BM

Part No:

G4S12020BM

Manufacturer:

Global Power

Datasheet:

-

Package:

TO-247-3

AINNX NO:

34711945-G4S12020BM

Description:

G4S12020BM

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AB
  • Lead Free Status / RoHS Status
    --
  • Package
    Cut Tape (CT);Tape & Box (TB);
  • Mfr
    Global Power Technology-GPT
  • Product Status
    Active
  • Current - Average Rectified (Io) (per Diode)
    33.2A (DC)
  • Series
    *
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Speed
    No Recovery Time > 500mA (Io)
  • Diode Type
    Silicon Carbide Schottky
  • Current - Reverse Leakage @ Vr
    30 µA @ 1200 V
  • Voltage - Forward (Vf) (Max) @ If
    1.6 V @ 10 A
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max)
    1200 V
  • Diode Configuration
    1 Pair Common Cathode
  • Reverse Recovery Time (trr)
    0 ns
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