HAT1025R

Hitachi HAT1025R

Part No:

HAT1025R

Manufacturer:

Hitachi

Datasheet:

-

Package:

-

AINNX NO:

29085961-HAT1025R

Description:

Power Field-Effect Transistor, 4.5A I(D), 20V, 0.15ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Package Description
    SMALL OUTLINE, R-PDSO-G8
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Max
    150 °C
  • Manufacturer Part Number
    HAT1025R
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Hitachi Ltd
  • Number of Elements
    2
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    HITACHI LTD
  • Risk Rank
    5.35
  • Part Package Code
    SOIC
  • Drain Current-Max (ID)
    4.5 A
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    MS-012AA
  • Drain Current-Max (Abs) (ID)
    4.5 A
  • Drain-source On Resistance-Max
    0.15 Ω
  • Pulsed Drain Current-Max (IDM)
    36 A
  • DS Breakdown Voltage-Min
    20 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    3 W
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