Infineon Technologies BCR512E6327HTSA1

Factory Lead Time

26 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

50V

Number of Elements

1

hFEMin

60

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Published

2002

JESD-609 Code

e3

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150°C

Min Operating Temperature

-65°C

Voltage - Rated DC

50V

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

330mW

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Current Rating

Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

500mA

Base Part Number

BCR512

Polarity

NPN

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

330mW

Transistor Application

SWITCHING

Halogen Free

Not Halogen Free

Gain Bandwidth Product

The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

100MHz

Transistor Type

NPN - Pre-Biased

Collector Emitter Voltage (VCEO)

50V

Max Collector Current

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 50mA 5V

Current - Collector Cutoff (Max)

100nA ICBO

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Transition Frequency

100MHz

Max Breakdown Voltage

50V

Collector Base Voltage (VCBO)

50V

Max Junction Temperature (Tj)

150°C

Resistor - Base (R1)

4.7 k Ω

Resistor - Emitter Base (R2)

4.7 k Ω

Height

1.1mm

Length

2.9mm

Width

1.3mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free