BFP650H6327XTSA1

Infineon Technologies BFP650H6327XTSA1

Part No:

BFP650H6327XTSA1

Package:

SC-82A, SOT-343

ROHS:

AINNX NO:

6083597-BFP650H6327XTSA1

Description:

Trans GP BJT NPN 4V 0.15A 4-Pin(3+Tab) SOT-343 T/R

Products specifications
  • Factory Lead Time
    4 Weeks
  • Package / Case
    SC-82A, SOT-343
  • Mounting Type
    Surface Mount
  • Mount
    Surface Mount
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Number of Pins
    4
  • Transistor Element Material
    SILICON GERMANIUM CARBON
  • Number of Elements
    1
  • Collector-Emitter Breakdown Voltage
    4.5V
  • Published
    2005
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    500mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Frequency
    41GHz
  • Base Part Number
    BFP650
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    500mW
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    4V
  • Max Collector Current
    150mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    110 @ 80mA 3V
  • Gain
    10.5dB ~ 21.5dB
  • Transition Frequency
    42000MHz
  • Max Breakdown Voltage
    4.5V
  • Frequency - Transition
    37GHz
  • Collector Base Voltage (VCBO)
    13V
  • Emitter Base Voltage (VEBO)
    1.2V
  • Noise Figure (dB Typ @ f)
    0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Width
    1.25mm
  • Length
    2mm
  • Height
    900μm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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