Infineon Technologies IRFB4227PBF

Factory Lead Time

12 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

65A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

330W Tc

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

21 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-40°C~175°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Series

HEXFET®

Published

2004

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Resistance

24MOhm

Number of Channels

1

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

330W

Case Connection

DRAIN

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

33 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

24m Ω @ 46A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

20ns

Vgs (Max)

±30V

Fall Time (Typ)

31 ns

Continuous Drain Current (ID)

65A

Threshold Voltage

5V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

200V

Pulsed Drain Current-Max (IDM)

260A

Dual Supply Voltage

200V

Recovery Time

150 ns

Max Junction Temperature (Tj)

175°C

Nominal Vgs

5 V

Height

19.8mm

Length

10.6426mm

Width

4.82mm

REACH SVHC

No SVHC

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free