IGN1011L1200

Integra Technologies Inc. IGN1011L1200

Part No:

IGN1011L1200

Datasheet:

IGN1011L1200

Package:

-

ROHS:

AINNX NO:

6094897-IGN1011L1200

Description:

GAN, RF POWER TRANSISTOR, L-BAND

Products specifications
  • Factory Lead Time
    4 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Transistor Element Material
    GALLIUM NITRIDE
  • Number of Elements
    1
  • Operating Temperature (Min.)
    -55°C
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • JESD-30 Code
    R-CDFM-F2
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    180V
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Highest Frequency Band
    L B
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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