IRFZ34VL

International Rectifier IRFZ34VL

Part No:

IRFZ34VL

Package:

-

AINNX NO:

69212623-IRFZ34VL

Description:

Description: Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Rohs Code
    No
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    INTERNATIONAL RECTIFIER CORP
  • Part Package Code
    TO-262AA
  • Package Description
    IN-LINE, R-PSIP-T3
  • Drain Current-Max (ID)
    30 A
  • Number of Elements
    1
  • Operating Temperature-Max
    175 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-262AA
  • Drain-source On Resistance-Max
    0.028 Ω
  • Pulsed Drain Current-Max (IDM)
    120 A
  • DS Breakdown Voltage-Min
    60 V
  • Avalanche Energy Rating (Eas)
    81 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    70 W
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