IRGP4062D-EPBF

International Rectifier IRGP4062D-EPBF

Part No:

IRGP4062D-EPBF

Datasheet:

-

Package:

TO-247-3

AINNX NO:

36671042-IRGP4062D-EPBF

Description:

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD

Products specifications
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AD
  • Collector-Emitter Breakdown Voltage
    600 V
  • RoHS
    Compliant
  • Package
    Bulk
  • Current-Collector (Ic) (Max)
    48 A
  • Mfr
    International Rectifier
  • Product Status
    Active
  • Test Conditions
    400V, 24A, 10Ohm, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 175°C (TJ)
  • Series
    -
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    250 W
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Input Type
    Standard
  • Power - Max
    250 W
  • Collector Emitter Voltage (VCEO)
    1.95 V
  • Max Collector Current
    48 A
  • Reverse Recovery Time
    89 ns
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 24A
  • IGBT Type
    Trench
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    75 nC
  • Current - Collector Pulsed (Icm)
    72 A
  • Td (on/off) @ 25°C
    41ns/104ns
  • Switching Energy
    115µJ (on), 600µJ (off)
  • Reverse Recovery Time (trr)
    89 ns
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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