IRLML2502TR

International Rectifier IRLML2502TR

Part No:

IRLML2502TR

Datasheet:

-

Package:

-

AINNX NO:

24253669-IRLML2502TR

Description:

Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Number of Elements
    1
  • Voltage Rating (DC)
    20 V
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape and Reel
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.25 W
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    4.2 A
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1.25 W
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    10 ns
  • Drain to Source Voltage (Vdss)
    20 V
  • Continuous Drain Current (ID)
    4.2 A
  • Gate to Source Voltage (Vgs)
    12 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    740 pF
  • Rds On Max
    45 mΩ
  • Lead Free
    Contains Lead
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