IXZR08N120A

IXYS IXZR08N120A

Part No:

IXZR08N120A

Manufacturer:

IXYS

Datasheet:

-

Package:

-

AINNX NO:

51345906-IXZR08N120A

Description:

Mosfet, N, Rf, Isoplus247; Drain Source Voltage Vds:1.2Kv; Continuous Drain Current Id:8A; Power Dissipation Pd:250W; Operating Frequency Min

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Package Description
    ISOPLUS 247, 3 PIN
  • Package Style
    IN-LINE
  • Package Body Material
    PLASTIC/EPOXY
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    175 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    IXZR08N120A
  • Package Shape
    RECTANGULAR
  • Manufacturer
    IXYS Corporation
  • Number of Elements
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    IXYS CORP
  • Risk Rank
    8.57
  • Drain Current-Max (ID)
    8 A
  • JESD-609 Code
    e1
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (Abs) (ID)
    8 A
  • DS Breakdown Voltage-Min
    1200 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    250 W
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