IXZR08N120

IXYS-RF IXZR08N120

Part No:

IXZR08N120

Manufacturer:

IXYS-RF

Package:

TO-247-3

ROHS:

AINNX NO:

6091754-IXZR08N120

Description:

RF MOSFET N-CHANNEL PLUS247-3

Products specifications
  • Factory Lead Time
    10 Weeks
  • Package / Case
    TO-247-3
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Transistor Element Material
    SILICON
  • Number of Elements
    1
  • Operating Temperature (Max.)
    175°C
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    1200V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    Z-MOS™
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Current Rating (Amps)
    8A
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Frequency
    65MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Transistor Type
    N-Channel
  • Gain
    23dB
  • Drain Current-Max (Abs) (ID)
    8A
  • DS Breakdown Voltage-Min
    1200V
  • Power - Output
    250W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    250W
  • Voltage - Test
    100V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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