13202

Kabel 13202

Part No:

13202

Manufacturer:

Kabel

Datasheet:

-

Package:

8-SOIC (0.154, 3.90mm Width)

AINNX NO:

34162154-13202

Description:

Power cable < 1 kV, for moving application

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Supplier Device Package
    8-SO
  • Current - Continuous Drain (Id) @ 25℃
    13.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Power Dissipation (Max)
    3.1W (Ta)
  • Stranding element
    No
  • Flame retardant
    According to IEC/EN 60332-3-24
  • Permitted cable outer temperature after assembling without vibration
    -40 - 80
  • Material core insulation
    Other
  • Colour outer sheath
    Black
  • Permitted cable outer temperature during assembling/handling
    -30 - 80
  • Outer diameter approx.
    6.8
  • Screen over stranding element
    None
  • Core identification
    Numbers
  • Nominal cross section conductor
    0.5
  • Screen over stranding
    None
  • Nominal voltage U0
    600
  • Low smoke (according to EN 61034-2)
    No
  • Min. permitted bending radius, moving application/free movement
    68
  • Min. permitted bending radius, stationary application/permanent installation
    28
  • Nominal voltage U
    1000
  • Material outer sheath
    Other
  • Conductor category
    Class 5 = flexible
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    AlphaSGT™
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9.8 mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    60V
  • Vgs (Max)
    ±20V
  • FET Feature
    --
0 Similar Products Remaining