24124

Kabel 24124

Part No:

24124

Manufacturer:

Kabel

Datasheet:

-

Package:

TO-220-3

AINNX NO:

34160672-24124

Description:

Power cable < 1 kV, for moving application

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220
  • Current - Continuous Drain (Id) @ 25℃
    15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Power Dissipation (Max)
    208W (Tc)
  • Stranding element
    No
  • Permitted cable outer temperature after assembling without vibration
    -40 - 80
  • Colour outer sheath
    Black
  • Permitted cable outer temperature during assembling/handling
    -30 - 80
  • Outer diameter approx.
    9.7
  • Screen over stranding element
    None
  • Core identification
    Numbers
  • Nominal cross section conductor
    0.5
  • Screen over stranding
    None
  • Nominal voltage U0
    300
  • Low smoke (according to EN 61034-2)
    No
  • Min. permitted bending radius, moving application/free movement
    73
  • Min. permitted bending radius, stationary application/permanent installation
    39
  • Nominal voltage U
    500
  • Material outer sheath
    Polyurethane (PUR)
  • Conductor category
    Class 6 = very flexible
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    aMOS™
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Not For New Designs
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    290 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    841pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    17.2nC @ 10V
  • Drain to Source Voltage (Vdss)
    650V
  • Vgs (Max)
    ±30V
  • FET Feature
    --
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