Lite-On, Inc. 2N7002E

EU RoHS

Supplier Unconfirmed

ECCN (US)

EAR99

Category

Power MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

0.43

Maximum Gate Source Leakage Current (nA)

10000

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

3000@10V

Typical Gate Charge @ Vgs (nC)

Typical Input Capacitance @ Vds (pF)

30@25V

Maximum Power Dissipation (mW)

830

Typical Fall Time (ns)

10

Typical Rise Time (ns)

3.5

Typical Turn-Off Delay Time (ns)

16

Typical Turn-On Delay Time (ns)

3.9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Manufacturer

LITE-ON SEMICONDUCTOR CORP.

RoHS

Y

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

SOT-23

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Configuration

Single

Channel Type

N