Package / Case
TO-247-3
Material
Si
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
24
Typical Gate Charge @ Vgs (nC)
150@10V
Typical Gate Charge @ 10V (nC)
150
Typical Input Capacitance @ Vds (pF)
4200@25V
Maximum Power Dissipation (mW)
300000
Typical Fall Time (ns)
28
Typical Rise Time (ns)
29
Typical Turn-Off Delay Time (ns)
68
Typical Turn-On Delay Time (ns)
36
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
Package Height
21.46(Max)
Package Width
5.3(Max)
Package Length
16.26(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247AD
Qualification
-
Continuous Drain Current Id
24A
Vds - Drain-Source Breakdown Voltage
200 V
Vgs th - Gate-Source Threshold Voltage
5 V
Pd - Power Dissipation
300 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
Through Hole
Qg - Gate Charge
150 nC
Rds On - Drain-Source Resistance
150 mOhms
Id - Continuous Drain Current
24 A
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Technology
Si
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Number of Channels
1 Channel
Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
300W
Channel Type
P