LP7411DT1WG

LRC Leshan Radio Co Ltd LP7411DT1WG

Part No:

LP7411DT1WG

Datasheet:

Package:

-

AINNX NO:

69131120-LP7411DT1WG

Description:

Power Field-Effect Transistor, 20A I(D), 60V, 0.0098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DFN5060-8B, 8 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    LESHAN RADIO CO LTD
  • Package Description
    DFN5060-8B, 8 PIN
  • Drain Current-Max (ID)
    20 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDSO-F8
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • Drain-source On Resistance-Max
    0.0098 Ω
  • Pulsed Drain Current-Max (IDM)
    80 A
  • DS Breakdown Voltage-Min
    60 V
  • Avalanche Energy Rating (Eas)
    120.05 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    5 W
  • Feedback Cap-Max (Crss)
    321 pF
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