MRF137

M/A-Com Technology Solutions MRF137

Part No:

MRF137

Datasheet:

MRF137

Package:

211-07

ROHS:

AINNX NO:

6093296-MRF137

Description:

FET RF 65V 400MHZ 211-07

Products specifications
  • Factory Lead Time
    20 Weeks
  • Mount
    Screw
  • Package / Case
    211-07
  • Number of Pins
    4
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Published
    2012
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    100W
  • Terminal Position
    RADIAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    5A
  • Frequency
    150MHz~400MHz
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Current - Test
    25mA
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    65V
  • Transistor Type
    N-Channel
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    40V
  • Gain
    7.7dB ~ 16dB
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    65V
  • Power - Output
    30W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    1.5dB
  • Voltage - Test
    28V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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