MagnaChip MMF60R750PTH

Mounting Type

Through Hole

Mount

Through Hole

Number of Pins

3

Number of Elements per Chip

1

Package Type

TO-220F

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+150 °C

Minimum Operating Temperature

-55 °C

Channel Mode

Enhancement

Number of Elements

1

RoHS

Compliant

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

154 ns

Package Description

,

Manufacturer Part Number

MMF60R750PTH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

Active

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.74

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

27.1 W

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

3

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

15 ns

Continuous Drain Current (ID)

5.7 A

Gate to Source Voltage (Vgs)

30 V

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

462 pF

Channel Type

N

Drain to Source Resistance

750 mΩ

Width

4.93mm

Height

16.13mm

Length

10.71mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No