Microsemi Corporation APT27GA90BD15

Factory Lead Time

33 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

600V, 14A, 10 Ω, 15V

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Published

1999

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

223W

Pin Count

a count of all of the component leads (or pins)

3

JESD-30 Code

R-PSFM-T3

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

223W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

900V

Max Collector Current

48A

JEDEC-95 Code

TO-247AD

Turn On Time

The time that it takes a gate circuit to allow a current to reach its full value.

18 ns

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 14A

Turn Off Time-Nom (toff)

281 ns

IGBT Type

PT

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

62nC

Current - Collector Pulsed (Icm)

79A

Td (on/off) @ 25°C

9ns/98ns

Switching Energy

413μJ (on), 287μJ (off)

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

RoHS Compliant