APTGT75H60T1G

Microsemi Corporation APTGT75H60T1G

Part No:

APTGT75H60T1G

Datasheet:

APTGT75H60T1G

Package:

SP1

ROHS:

AINNX NO:

6049169-APTGT75H60T1G

Description:

IGBT MODULE 600V 100A 250W SP1

Products specifications
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    36 Weeks
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    SP1
  • Number of Pins
    12
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    600V
  • Number of Elements
    4
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C~175°C TJ
  • Published
    2007
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    12
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    250W
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Pin Count

    a count of all of the component leads (or pins)

    12
  • Configuration
    Full Bridge Inverter
  • Case Connection
    ISOLATED
  • Power - Max
    250W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    100A
  • Current - Collector Cutoff (Max)
    250μA
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    4.62nF
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    170 ns
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 75A
  • Turn Off Time-Nom (toff)
    310 ns
  • IGBT Type
    Trench Field Stop
  • NTC Thermistor

    resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

    Yes
  • Gate-Emitter Voltage-Max
    20V
  • Input Capacitance (Cies) @ Vce
    4.62nF @ 25V
  • VCEsat-Max
    1.9 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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