MRF586

Microsemi Corporation MRF586

Part No:

MRF586

Datasheet:

MRF586

Package:

TO-205AD, TO-39-3 Metal Can

ROHS:

AINNX NO:

6085434-MRF586

Description:

Trans GP BJT NPN 20V 0.2A 3-Pin TO-39

Products specifications
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 2 weeks ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    17V
  • Current-Collector (Ic) (Max)
    200mA
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    2004
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1W
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    WIRE
  • Frequency
    3GHz
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Configuration
    SINGLE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1W
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    1W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 50mA 5V
  • Gain
    13.5dB
  • Transition Frequency
    3000MHz
  • Collector Base Voltage (VCBO)
    35V
  • Emitter Base Voltage (VEBO)
    3V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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