VRF2933

Microsemi Corporation VRF2933

Part No:

VRF2933

Datasheet:

VRF2933(MP)

Package:

M177

ROHS:

AINNX NO:

6093310-VRF2933

Description:

MOSFET RF PWR N-CH 50V 300W M177

Products specifications
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    28 Weeks
  • Mount
    Screw
  • Package / Case
    M177
  • Number of Pins
    5
  • Number of Elements
    1
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    170V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200°C
  • Min Operating Temperature
    -65°C
  • Current Rating (Amps)
    2mA
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    648W
  • Terminal Position
    RADIAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    40A
  • Frequency
    150MHz
  • JESD-30 Code
    O-CRFM-F4
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    250mA
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    180V
  • Transistor Type
    N-Channel
  • Continuous Drain Current (ID)
    40A
  • Gate to Source Voltage (Vgs)
    40V
  • Gain
    25dB
  • Power - Output
    300W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    50V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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