NXP BUK9K17-60E

Mounting Type

Requires Holder

Package / Case

Cartridge, Non-Standard

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Terminals

6

Transistor Element Material

SILICON

Package

Bulk

Mfr

Eaton - Bussmann Electrical Division

Product Status

Active

Class

-

Package Description

SMALL OUTLINE, R-PDSO-G6

Package Style

SMALL OUTLINE

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Rohs Code

Yes

Manufacturer Part Number

BUK9K17-60E

Package Shape

RECTANGULAR

Manufacturer

Nexperia

Number of Elements

2

Part Life Cycle Code

Active

Ihs Manufacturer

NEXPERIA

Risk Rank

5.38

Drain Current-Max (ID)

26 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-

Series

-

Size / Dimension

-

JESD-609 Code

e3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Applications

Electrical, Industrial

Current Rating (Amps)

-

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Reach Compliance Code

not_compliant

Reference Standard

AEC-Q101; IEC-60134

JESD-30 Code

R-PDSO-G6

Approval Agency

-

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

Response Time

the time taken for a circuit or measuring device, when subjected to a change in input signal, to change its state by a specified fraction of its total response to that change.

-

Transistor Application

SWITCHING

Fuse Type

Cartridge

Breaking Capacity @ Rated Voltage

-

Polarity/Channel Type

N-CHANNEL

Drain-source On Resistance-Max

0.017 Ω

Pulsed Drain Current-Max (IDM)

148 A

DS Breakdown Voltage-Min

60 V

Avalanche Energy Rating (Eas)

64 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

Features

-