PESD5V0L1UB

NXP Semiconductors PESD5V0L1UB

Part No:

PESD5V0L1UB

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

69818020-PESD5V0L1UB

Category:

Accessories

Description:

ESD Suppressor TVS 30KV 2-Pin SOD-523

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    2
  • Breakdown Voltage / V
    6.8 V
  • Reverse Stand-off Voltage
    5 V
  • RoHS
    Compliant
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Capacitance
    25 pF
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    42 W
  • Depth
    850 µm
  • Working Voltage
    5 V
  • Number of Channels
    1
  • Leakage Current
    100 nA
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Max Reverse Leakage Current
    100 nA
  • Clamping Voltage
    12 V
  • Peak Pulse Current

    The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

    3.5 A
  • Peak Pulse Power
    42 W
  • Direction
    Unidirectional
  • ESD Protection
    Yes
  • Max Junction Temperature (Tj)
    150 °C
  • Ambient Temperature Range High

    This varies from person to person, but it is somewhere between 68 and 77 degrees F on average. The temperature setting that is comfortable for an individual may fluctuate with humidity and outside temperature as well. The temperature of an air conditioned room can also be considered ambient temperature.

    150 °C
  • Min Breakdown Voltage
    6.4 V
  • Height
    650 µm
  • Length
    1.25 mm
  • Width
    850 µm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    No SVHC
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