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PDTB143EQA147

NXP USA Inc. PDTB143EQA147

Part No:

PDTB143EQA147

Manufacturer:

Datasheet:

Package:

3-XDFN Exposed Pad

AINNX NO:

28174764-PDTB143EQA147

Category:

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description:

PDTB143EQA SMALL SIGNAL FET

Products specifications

Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Mfr
NXP USA Inc.
Package
Bulk
Product Status
Active
Current-Collector (Ic) (Max)
500 mA
Series
PDTB143
Power - Max
325 mW
Transistor Type
PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Frequency - Transition
150 MHz
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms

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