BAW56LT1G

ON Semiconductor BAW56LT1G

Part No:

BAW56LT1G

Manufacturer:

ON Semiconductor

Datasheet:

BAW,SBAW56L

Package:

TO-236-3, SC-59, SOT-23-3

ROHS:

AINNX NO:

5823291-BAW56LT1G

Description:

DIODE ARRAY GP 70V 200MA SOT23-3

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Number of Elements
    2
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.10.00.70
  • Voltage - Rated DC
    70V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    225mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    200mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BAW56L
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Common Anode
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    2.5μA @ 70V
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    300mW
  • Voltage - Forward (Vf) (Max) @ If
    1.25V @ 150mA
  • Forward Current

    Current which flows upon application of forward voltage.

    200mA
  • Max Reverse Leakage Current
    2.4μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    4A
  • Output Current-Max
    0.1A
  • Halogen Free
    Halogen Free
  • Current - Average Rectified (Io)
    200mA DC
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.25V
  • Max Reverse Voltage (DC)
    70V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    200mA
  • Reverse Recovery Time
    6 ns
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    2.5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    70V
  • Peak Non-Repetitive Surge Current
    4A
  • Diode Configuration
    1 Pair Common Anode
  • Max Forward Surge Current (Ifsm)
    500mA
  • Recovery Time
    6 ns
  • Height
    940μm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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