DRA5114E0L

Panasonic Electronic Components DRA5114E0L

Part No:

DRA5114E0L

Datasheet:

DRA5114E0L

Package:

SC-85

ROHS:

AINNX NO:

7837563-DRA5114E0L

Description:

Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 2.0x2.1mm

Products specifications
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-85
  • Number of Pins
    85
  • Collector-Emitter Breakdown Voltage
    50V
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    BUILT IN BIAS RESISTOR RATIO IS 1
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    150mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Base Part Number
    DRA5114
  • JESD-30 Code
    R-PDSO-F3
  • Polarity
    PNP
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Transistor Application
    SWITCHING
  • Transistor Type
    PNP - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    -50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 500μA, 10mA
  • Max Breakdown Voltage
    50V
  • Resistor - Base (R1)
    10 k Ω
  • Continuous Collector Current
    -100mA
  • Resistor - Emitter Base (R2)
    10 k Ω
  • Height
    800μm
  • Length
    2mm
  • Width
    1.25mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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