Panasonic Electronic Components MTM78E2B0LBF

Factory Lead Time

10 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Number of Pins

8

Transistor Element Material

SILICON

Number of Elements

2

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

2 μs

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Published

2011

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

700mW

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

MTM78E2B

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

700mW

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

200 ns

Power - Max

150mW

FET Type

2 N-Channel (Dual)

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

25m Ω @ 2A, 4V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 10V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

500ns

Drain to Source Voltage (Vdss)

20V

Fall Time (Typ)

1.5 μs

Continuous Drain Current (ID)

4A

Gate to Source Voltage (Vgs)

12V

Drain Current-Max (Abs) (ID)

4A

Drain-source On Resistance-Max

0.025Ohm

DS Breakdown Voltage-Min

20V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Standard

Nominal Vgs

850 mV

Height

600μm

Length

2mm

Width

1.7mm

REACH SVHC

No SVHC

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

RoHS Compliant