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Qorvo TGF2929-FS
TGF2929-FS
NI-360
30909702-TGF2929-FS
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
- Package / CaseNI-360
- RoHSDetails
- Transistor PolarityN-Channel
- Id - Continuous Drain Current12 A
- Vds - Drain-Source Breakdown Voltage28 V
- Moisture SensitiveYes
- Pd - Power Dissipation144 W
- Factory Pack QuantityFactory Pack Quantity25
- Vgs - Gate-Source Voltage145 V
- Vgs th - Gate-Source Threshold Voltage- 2.9 V
- Part # AliasesTGF2929 1123716
- Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tray - SeriesTGF2929
- TypeRF Power MOSFET
- Operating Frequency
Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.
3.5 GHz - Output Power
That power available at a specified output of a device under specified conditions of operation.
107 W - Gain14 dB
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