UJ3C065080B3

Qorvo UJ3C065080B3

Part No:

UJ3C065080B3

Manufacturer:

Qorvo

Datasheet:

-

Package:

D2PAK-3

AINNX NO:

64016060-UJ3C065080B3

Description:

MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L

Products specifications
  • Package / Case
    D2PAK-3
  • Vds - Drain-Source Breakdown Voltage
    650 V
  • Vgs th - Gate-Source Threshold Voltage
    4 V
  • Pd - Power Dissipation
    115 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Vgs - Gate-Source Voltage
    - 25 V, + 25 V
  • Minimum Operating Temperature
    - 55 C
  • Mounting Styles
    SMD/SMT
  • Channel Mode
    Enhancement
  • Qg - Gate Charge
    51 nC
  • Rds On - Drain-Source Resistance
    100 mOhms
  • Id - Continuous Drain Current
    25 A
  • Series
    UJ3C
  • Technology
    SiC
  • Number of Channels
    1 Channel
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