Rectron RM11N800T1

Package / Case

TO-220F-3

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

33.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

Through Hole

Forward Transconductance - Min

7 S

Channel Mode

Enhancement

Manufacturer

Rectron

Brand

Rectron

Qg - Gate Charge

48 nC

Rds On - Drain-Source Resistance

420 mOhms

RoHS

Details

Typical Turn-Off Delay Time

62 ns

Id - Continuous Drain Current

11 A

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Subcategory

MOSFETs

Technology

Si

Configuration

Single

Number of Channels

1 Channel

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

7 ns

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

1 N-Channel

Product Category

a particular group of related products.

MOSFET