Rectron USA RM2N650IP

Mounting Type

Through Hole

Package / Case

TO-251-3 Stub Leads, IPak

Supplier Device Package

TO-251

Mfr

Rectron USA

Package

Tube

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

23W (Tc)

Manufacturer

RECTRON

RoHS

Y

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

23 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

Through Hole

Forward Transconductance - Min

2 S

Channel Mode

Enhancement

Brand

Rectron

Qg - Gate Charge

10 nC

Rds On - Drain-Source Resistance

2.5 Ohms

Typical Turn-Off Delay Time

65 ns

Id - Continuous Drain Current

2 A

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Case - TO-251

Capacitance

Input Capacitance (Ciss) - 190pF

Subcategory

MOSFETs

Configuration

Single

Number of Channels

1 Channel

Voltage

Vdss - 710V

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

190 pF @ 50 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

3 ns

Drain to Source Voltage (Vdss)

650 V

Vgs (Max)

±30V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

1 N-Channel

FET Feature

-

Product Category

a particular group of related products.

MOSFET