RKP200KP-1#R0

Renesas RKP200KP-1#R0

Part No:

RKP200KP-1#R0

Manufacturer:

Renesas

Datasheet:

-

Package:

-

AINNX NO:

40507296-RKP200KP-1#R0

Category:

Diodes - RF

Description:

RKP200KP-1#R0 - SILICON EPITAXIAL PLANAR PIN DIODE FOR ANTENNA SWITCHING

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Lead, Tin
  • Mount
    Through Hole
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Tolerance
    0.25 %
  • Number of Terminations
    2
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    25 ppm/°C
  • Resistance
    1.5 kΩ
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -65 °C
  • Composition
    Metal Film
  • Power Rating
    125 mW
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    125 mW
  • Military Standard
    MIL-R-10509
  • Features
    Flame Retardant Coating, Military, Moisture Resistant
  • Width
    2.29 mm
  • Length
    6.096 mm
  • Diameter
    2.29 mm
  • Lead Free
    Contains Lead
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