NESG2031M05-T1-A

Renesas Electronics America Inc NESG2031M05-T1-A

Part No:

NESG2031M05-T1-A

Datasheet:

-

Package:

SOT-343F

AINNX NO:

28323322-NESG2031M05-T1-A

Description:

NESG2031 - NPN SIGE RF TRANSISTO

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-343F
  • Mount
    Surface Mount
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Supplier Device Package
    M05
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON GERMANIUM
  • Mfr
    Renesas Electronics America Inc
  • Product Status
    Obsolete
  • Package
    Bulk
  • Current-Collector (Ic) (Max)
    35mA
  • Collector-Emitter Breakdown Voltage
    5 V
  • Voltage Rating (DC)
    5 V
  • RoHS
    Compliant
  • Package Description
    SMALL OUTLINE, R-PDSO-F4
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    Yes
  • Transition Frequency-Nom (fT)
    25000 MHz
  • Manufacturer Part Number
    NESG2031M05-T1-A
  • Package Shape
    RECTANGULAR
  • Manufacturer
    NEC Electronics Group
  • Number of Elements
    1
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    NEC ELECTRONICS CORP
  • Risk Rank
    5.29
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • JESD-609 Code
    e6
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN BISMUTH
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -65 °C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    175 mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    35 mA
  • Frequency
    25 GHz
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    R-PDSO-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Polarity
    NPN
  • Configuration
    SINGLE
  • Power - Max
    175mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Max Collector Current
    35 mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    130 @ 5mA, 2V
  • Gain
    10dB ~ 17dB
  • Voltage - Collector Emitter Breakdown (Max)
    5V
  • Transition Frequency
    25 GHz
  • Frequency - Transition
    25GHz
  • Collector Base Voltage (VCBO)
    13 V
  • Emitter Base Voltage (VEBO)
    1.5 V
  • Collector Current-Max (IC)
    0.035 A
  • Continuous Collector Current
    35 mA
  • Collector-Emitter Voltage-Max
    5 V
  • Highest Frequency Band
    C BAND
  • Collector-Base Capacitance-Max
    0.25 pF
  • Noise Figure (dB Typ @ f)
    0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
  • Width
    1.25 mm
  • Height
    590 µm
  • Length
    2 mm
  • Lead Free
    Lead Free
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