FJP13007H1TU

Rochester Electronics FJP13007H1TU

Part No:

FJP13007H1TU

Datasheet:

-

Package:

-

AINNX NO:

69859447-FJP13007H1TU

Description:

Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Products specifications
  • Mount
    Through Hole
  • Number of Pins
    3
  • Weight
    1.214 g
  • Case/Package
    TO-220
  • Collector-Emitter Breakdown Voltage
    400 V
  • hFEMin
    5
  • Number of Elements
    1
  • RoHS
    Compliant
  • Voltage Rating (DC)
    400 V
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -65 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    80 W
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    8 A
  • Frequency
    4 MHz
  • Polarity
    NPN
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    80 W
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    4 MHz
  • Collector Emitter Voltage (VCEO)
    400 V
  • Max Collector Current
    8 A
  • Max Frequency
    4 MHz
  • Transition Frequency
    4 MHz
  • Collector Base Voltage (VCBO)
    700 V
  • Emitter Base Voltage (VEBO)
    9 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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